| 摘要 |
The invention relates to a semiconductor device and the process of forming a metal oxy-nitride gate dielectric layer or a metal-silicon oxy-nitride gate dielectric layer. The metal oxy-nitride or metal-silicon oxy-nitride dielectric layer comprises at least one of a metal, silicon, oxygen, and nitrogen atoms where the nitrogen to oxygen atomic ratio is at least 1:2. The metal oxy-nitride or metal-silicon oxy-nitride material has a higher dielectric constant in comparison with a silicon dioxide, providing similar or improved electrical characteristics with a thicker thickness. Other benefits include reduced leakage properties, improved thermal stability, and reduced capacitance versus voltage (CV) hysteresis offset.
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