发明名称 |
Method of manufacturing a mask ROM semiconductor device |
摘要 |
Disclosed is a method of manufacturing a semiconductor device including a gate electrode on a semiconductor substrate through a gate insulated film; source/drain regions formed to be adjacent to the gate electrode; and an Al wiring formed through an interlayer insulating film covering the gate electrode, wherein impurity ions are implanted in a surface layer of the substrate using the Al wiring and a photoresist formed thereon as a mask, and wherein no photoresist is formed on the Al wiring arranged above regions in which the impurity ions are implanted in adjacent elements.
|
申请公布号 |
US6576518(B1) |
申请公布日期 |
2003.06.10 |
申请号 |
US20020091991 |
申请日期 |
2002.03.06 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
YAMADA JUNJI;YAMADA YUTAKA;ARIYOSHI JUNICHI |
分类号 |
H01L21/8246;H01L27/112;(IPC1-7):H01K21/824 |
主分类号 |
H01L21/8246 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|