发明名称 Process for manufacturing mirror devices using semiconductor technology
摘要 A method for fabricating a mirror array from multilayered substrate structures. The method forms a release layer overlying a material layer, which is formed on an insulating layer of multilayered substrate. The insulating layer is sandwiched between the material layer and a handle layer. As merely an example, the material layer is a silicon layer defined over a silicon dioxide layer on a silicon on insulator structure, commonly known as SOI. The method forms an opening in the release layer to expose a portion of the material layer. The method forms a torsion bar layer overlying the release layer and in the opening to connect to the material layer; and removes the release layer to hang the material layer from the torsion bar layer.
申请公布号 US6577427(B1) 申请公布日期 2003.06.10
申请号 US20010866312 申请日期 2001.05.25
申请人 NAYNA NETWORKS, INC. 发明人 GEE DALE A.;SATHE ABHIJEET D.
分类号 G02B6/12;G02B6/122;G02B6/35;G02B26/08;(IPC1-7):G02B26/08;G02B5/08;G02B6/26 主分类号 G02B6/12
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