Method for forming a thin film transistor with a lightly doped drain structure

摘要

A method for forming a thin film transistor with lightly doped drain structure comprising the steps of forming a gate insulating layer and a gate electrode on a polysilicon layer; forming a photoresist layer with a predetermined thickness on the gate electrode and on a portion of the polysilicon layer; and implanting first conductive type impurities into the polysilicon layer so as to form a first ion-implant region and a second ion-implant region, wherein the doping concentration of the second ion-implant region is higher than that of the first ion-implant region.