Semiconductor device and GaN-based field effect transistor for use in the same

摘要

The present invention provides a semiconductor device as an FET integrated object having a small effective area, a small ON resistance during operation, a high voltage resistance, and capable of large-current drive. This device comprises one or more FET's each having a gate electrode, a source electrode, and a drain electrode, and arranged side by side on a single plane to constitute a first block which is stacked on a second block having a configuration identical to the first block, wherein the gate electrode, the source electrode, and the drain electrode of the FET(s) of the first block are directly joined with the gate electrode, the source electrode, and the drain electrode of the FET(s) of the second block, respectively.