GALLIUM NITRIDE SINGLE CRYSTAL SUBSTRATE, METHOD FOR GROWING THE SAME AND METHOD FOR PRODUCING THE SAME

摘要

PROBLEM TO BE SOLVED: To eliminate the defect of dislocation which rises like mist from the central part of the pit of a facet surface and causes a radial surface defect in a facet growth method for growing gallium nitride while forming and maintaining the facet, and also to eliminate the defect in which the positions causing the pits are not identified and thus a device to be laid on a substrate is not designed.

SOLUTION: GaN is raised through facet growth method regularly forming seed patterns on a base plate and then forming and holding the pit composed of the facet thereon. Closedly assembled regions H for defects is formed at the bottom of the pit composed of the facet surface, and dislocations are assembled into the region H and a region Z accompanying low dislocations for single crystal and an extra region Y for low dislocations of the single crystal around the region H are subjected to low dislocation. The closedly assembled region H for defects is closed, so that the dislocations are confined and are not re- released.

COPYRIGHT: (C)2003,JPO