| 摘要 |
PROBLEM TO BE SOLVED: To prepare a porous silica film which has a low relative permittivity and the mechanical strengths to sufficiently withstand a chemical and mechanical polishing (CMP) step in the copper wiring step of a semiconductor device and, simultaneously, reduces the amount of gaseous pollutants on forming a via hole. SOLUTION: The coating composition for producing an insulating film comprises a silica precursor containing a specified ratio of the silicon atom derived from a trifunctional alkoxysilane to the silicon atom derived from a tetrafunctional alkoxysilane, a block copolymer, an acid catalyst, and a solvent. COPYRIGHT: (C)2003,JPO
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