| 发明名称 |
Multi-bit magnetic memory device |
| 摘要 |
A memory cell includes a conductor clad with ferromagnetic material; first and second spacer layers on opposite sides of the clad conductor; a first data layer on the first spacer layer; and a second data layer on the second spacer layer.
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| 申请公布号 |
US6577529(B1) |
申请公布日期 |
2003.06.10 |
| 申请号 |
US20020235011 |
申请日期 |
2002.09.03 |
| 申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
SHARMA MANISH;ANTHONY THOMAS C.;TRAN LUNG T. |
| 分类号 |
G11C11/15;G11C11/56;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/15 |
| 代理机构 |
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