发明名称 Structure for FIB based microanalysis and method for manufacturing it
摘要 Microanalysis of small areas on insulating substrates can be a problem because of charge and thermal buildup. One solution has been to coat the underside of the area with a layer of thermally and electrically conductive material. This becomes very difficult to do when there is no clear access to the surface in question. The present invention solves this problem by forming two cavities, on opposite sides of the area that is to be microanalyzed, that extend downwards into the substrate at an angle to its surface so that they intersect directly below the microanalysis area. The result is a cavity that is bridged by a beam having a triangular cross-section. Part of said beam is then selectively removed, resulting in a cantilever that extends out over the cavity with the microanalysis area located near its free end. Coating of the cantilever's underside is achieved by using a focused ion beam to first deposit the layer in question on the two lower sloping surfaces of the cavity. Then, as a result of sputtering by the ion beam itself, some of this material is ejected and redeposits on the underside of the beam.
申请公布号 US6576894(B1) 申请公布日期 2003.06.10
申请号 US20010888469 申请日期 2001.06.25
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY 发明人 DOONG YIH-YUH
分类号 G01Q60/12;G01N23/22;(IPC1-7):H01J49/00;G01N23/00 主分类号 G01Q60/12
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