| 发明名称 |
Etching of silicon nitride by anhydrous halogen gas |
| 摘要 |
The present invention discloses a method for removing silicon nitride from a substrate, characterised in that it comprises contacting said substrate with a molten halogen salt.
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| 申请公布号 |
US6576151(B1) |
申请公布日期 |
2003.06.10 |
| 申请号 |
US20000656041 |
申请日期 |
2000.09.08 |
| 申请人 |
INTERNUIVERSITAIR MICROELEKTRONICA CENTRUM |
发明人 |
VEREECKE GUY;MEURIS MARC |
| 分类号 |
H01L21/311;H01L21/318;(IPC1-7):B44C1/22 |
主分类号 |
H01L21/311 |
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