| 摘要 |
PURPOSE: A transistor and a method for manufacturing the same in a semiconductor device are provided to stably maintain the electrical characteristics irrespective of CD(Critical Dimension) of a gate by thickening edge thickness of a gate oxide layer. CONSTITUTION: A gate oxide layer(12) and a gate electrode(13) are sequentially formed on a semiconductor substrate(11). The edge portions of the gate oxide layer(12) is grown by oxidation processing, thereby thickening the edge thickness compared to the center portion of the gate oxide layer(12). The oxide layer grown on the gate electrode(13) and the substrate(11) is then removed. A source/drain region(17) is formed in the substrate.
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