METHOD FOR FORMING MULTILAYER METAL WIRING

摘要

PURPOSE: A method for forming a multilayer metal wiring is provided to be capable of minimizing the via resistance. CONSTITUTION: The first metal wiring(38) with the first width is formed on a semiconductor substrate(31) having a transistor. An IMD(InterMetal Dielectric)(39) is formed on the entire surface of the first metal wiring(38). After forming a photoresist pattern on the intermetal dielectric(39), a via hole having the second width is formed by selectively etching the intermetal dielectric(39) and the portions of the first metal wiring(38). At this time, the second width is relatively narrow compared to the first width. The second metal wiring(41) is formed in the via hole to contact the first metal wiring.