METHOD FOR FABRICATING STORAGE NODE OF CAPACITOR OF MEMORY DEVICE

摘要

PURPOSE: A method for fabricating a storage node of a capacitor of a memory device is provided to increase an align margin of an exposure process by reducing the thickness of a photoresist layer, and to prevent an electric leakage caused by partial damage by making the upper corner of a stack-type storage node in order to prevent concentration of stress on a dielectric layer stacked on the storage node. CONSTITUTION: A conductive layer for the storage node is formed. A photoresist pattern(253) is formed on the conductive layer wherein the thickness of 1000 angstrom of the photoresist pattern is left when the conductive layer is completely etched. An anisotropical etch process is performed on the conductive layer by using the photoresist pattern as an etch mask.