| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to decrease sheet resistance of a polysilicon gate electrode by making the grain if a silicide layer small while increasing thermal stability of the silicon layer, and to improve a leakage current of a source/drain junction part by minimizing consumption of silicon ions of a substrate. CONSTITUTION: A gate oxide layer(23) and the polysilicon gate electrode(24) are formed on a silicon substrate(21). After an insulation spacer layer(28) is formed on both sidewalls of the gate electrode, the source/drain junction part(29) is formed. A metal layer for silicide is formed on the resultant structure including the gate electrode and the junction part. The first heat treatment process is performed to form a metal-silicide layer(200s) on the gate electrode and the junction part. Silicon ions are implanted into the metal-silicide layer. An ultimate metal-silicide layer is formed on the gate electrode and the junction part through a selective etch process and the second heat treatment process.
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