| 摘要 |
PURPOSE: A CMOS(Complementary Metal Oxide Semiconductor) image sensor is provided to enhance the sensitivity by forming a photo gate with a transparent material such as ITO(Indium Tin Oxide). CONSTITUTION: A transfer gate(TG) is formed on an upper surface of the first conductive type semiconductor substrate(30). A photo gate(PG) is formed on the first conductive type semiconductor substrate of one side of the transfer gate. The photo gate is formed with a transparent material. The second conductive type heavily doped junction region(32A) is formed on the first conductive type semiconductor substrate between the transfer gate and the photo gate. The second floating diffusion region(32B) is formed on the first conductive type semiconductor substrate of the other side of the transfer gate. The transparent material is formed with an ITO layer. The transfer gate has a polycide structure.
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