| 摘要 |
<p>PURPOSE: A method for changing the transmissivity of a transparent conductive film is provided to entirely or locally ion-implanting impurities into a transparent conductive film for changing the transmissivity according to portions such as common electrodes, pixel electrodes or black matrix, thereby preventing the reflection caused by external light without using an expensive polarization plate. CONSTITUTION: A method for changing the transmissivity of a transparent conductive film includes the steps of forming a transparent conductive film with one of ITO, IO, TO, IZO and ZnO on a substrate(10), and changing the transmissivity of the transparent conductive film by implanting impurities(14) serving as high energy sources into the film. The high energy sources are accelerated ions such as H, P, B, As and Ar and implanted by an energy of 40-100KeV with an ion implanter or an ion shower. The high energy sources are implanted more than once by different implantation energies.</p> |
