| 摘要 |
PURPOSE: A magnetic memory device and a manufacturing method thereof are provided to be capable of reducing the occupancy area of a memory cell region. CONSTITUTION: In the device, the MTJ elements(30) serially connected in parallel with the surface of a semiconductor substrate(11) are arranged between the bit lines(35) and the word lines(22) as separated therefrom respectively. In this arrangement, the MTJ elements(30) are connected in series, specifically by interconnecting an upper electrode(33) and a lower electrode(31) alternately. For example, an arbitrary MTJ element(30a) is connected to an adjacent MTJ element(30b) at the upper electrode(33) and to the other adjacent MTJ element(30c) at the lower electrode(31). In addition, the terminal one of the serially connected MTJ elements(30) in each column is connected through contacts(16,18,26) and a wiring(17) to a source/drain diffusion layer(13) of the MOSFET(14). The MOSFET(14) is arranged at a periphery of a memory cell array region(10), in such a configuration that below each of the MTJ elements(30) in the semiconductor substrate(11) is there present an element-isolating insulation film having, for example, a shallow trench isolation(STI) structure.
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