| 摘要 |
PURPOSE: A method for fabricating a transistor of a semiconductor device is provided to effectively reduce external resistance of a low density impurity region without deterioration of a short channel effect, increase of parasitic capacitance, and decrease of hot carrier immunity by leaving predetermined thickness of a gate electrode on the low density impurity region so as to transfer a potential caused by the gate electrode. CONSTITUTION: A gate oxide layer(12) and a polysilicon layer(13) are sequentially formed on a semiconductor substrate(11). A predetermined region of the polysilicon layer is etched to be left on the gate oxide layer. A low density impurity ion implantation process forms a low density impurity region(14) in a predetermined region on the semiconductor substrate. After the first spacer(15A) is formed on the sidewall of the polysilicon layer, the remaining polysilicon layer and gate oxide layer are etched to form a gate electrode using the polysilicon layer and the first spacer as a mask. The second spacer(16A) is formed on the sidewall of the remaining polysilicon layer and gate oxide layer under the first spacer. A high density impurity ion implantation process forms a high density impurity region(17) in a predetermined region on the semiconductor substrate.
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