| 摘要 |
PURPOSE: A method for forming a metal wiring in a semiconductor device is provided to improve interconnection resistance by increasing the contact area between a contact plug and the metal wiring using a sidewall. CONSTITUTION: An interlayer dielectric(12a) is formed on a semiconductor substrate(11). A contact hole(13) is formed by selectively etching the interlayer dielectric. A contact plug(14) is formed by filling a conductive layer into the contact hole(13). The interlayer dielectric is partially removed so as to protrude the contact plug(14). A sidewall(15a) is formed at sidewalls of the protrudent contact plug(14). Then, a metal wiring(15) is formed to contact the contact plug.
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