| 摘要 |
PURPOSE: A method for fabricating a flash memory cell is provided to simplify a fabricating process and improve yield by performing only an isolation oxide(ISO) mask process before a floating gate is formed. CONSTITUTION: The first pad layer, a buffer layer, and the second pad layer are formed on a semiconductor substrate(10). A trench is formed in the semiconductor substrate. After a dummy layer is formed on the resultant structure, the first planarization process is performed to expose the second pad layer. The second pad layer is removed until the buffer layer is exposed so that a predetermined portion of the dummy layer is protruded. The dummy layer is etched to have a predetermined width while the buffer layer is eliminated. After the first polysilicon layer is formed on the resultant structure, the second planarization process is performed to form an isolated floating gate. A dielectric layer(36) and the second polysilicon layer(38) are formed on the resultant structure and are etched to form a control gate.
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