METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to simultaneously realize position control of crystal particles aligned with arrangement of a thin film transistor(TFT) and improvement of processing speed of the crystallization process and to fabricate a semiconductor device which can continuously form large size particles due to an artificially controlled super lateral growth and also can enhance the substrate processing efficiency in the laser crystallization process. CONSTITUTION: The entire part of a semiconductor film within the surface of substrate is never irradiated with laser, but a marker indicating the reference position is formed to crystallize at least the necessary portion. Since the time required for laser crystallization can be reduced, processing rate of the substrate can be improved.