| 摘要 |
PURPOSE: A structure of a metal interconnection for a thin film transistor(TFT) is provided to decrease resistivity of the metal interconnection and obtain physical stability by controlling the thickness of a multi layer when forming the metal interconnection made of the multi layer having two different layers. CONSTITUTION: An underlying layer, an intermediate layer(32) and an upper layer are sequentially formed on a substrate(30). A thickness ration of the upper layer and the underlying layer satisfy the following formula. M1+M3<=0.3(M1 and M3 are thickness ratios of the underlying layer and the upper layer regarding the thickness of the metal interconnection). M1+M2+M3=1(M2 is a thickness ratio of the intermediate layer regarding the thickness of the metal interconnection).
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