METHOD FOR FABRICATING TANTALUM NITRIDE LAYER AND SEMICONDUCTOR DEVICE FABRICATED THEREBY

摘要

PURPOSE: A method for fabricating a tantalum nitride layer is provided to embody a high integration of a semiconductor device by forming a barrier metal layer of a metal interconnection and an electrode of a metal capacitor while using tantalum nitride. CONSTITUTION: A wafer(11) is loaded into a deposition chamber. Chemical vapor of a tantalum component is pulsed to form a tantalum layer(12) on the wafer. The deposition chamber is firstly purged. NH3 gas is pulsed to form a tantalum-nitride combination layer(13) in which nitride combines with the tantalum layer. The deposition chamber is secondly purged. The mentioned processes from the pulsation of the chemical vapor to the second purge of the deposition chamber are repeated at least twice to stack the tantalum-nitride combination layer. A heat treatment process is performed on the stacked tantalum-nitride combination layer to form the tantalum nitride layer(130).