| 摘要 |
PURPOSE: A magnetic RAM(Random Access Memory), a reading circuit thereof, and a manufacturing method thereof are provided to be capable of increasing the memory capacity of the magnetic RAM. CONSTITUTION: A magnetic RAM is provided with a plurality of memory cells(11) connected with each other in series for storing data by using a magnetic resistance effect, a plurality of bit lines connected with one end portions of the memory cells and prolonged to the first direction, a reading circuit(29E) connected to the bit line. At this time, the reading circuit includes a sensing amplifier. Preferably, the resistance values of the memory cells are different with each other though the same magnetization state is applied to the memory cells.
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