| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent generation of leakage current and short caused by voids by preventing the exposure of voids during CMP or etch-back processing. CONSTITUTION: A conductive line(100) including the first conductive layer(20) and a capping layer(30), is formed on a semiconductor substrate(10). After forming the second conductive layer on the resultant structure, plugs(50A,50B) are formed to connect the substrate and to arrange vertically the conductive line(100) by patterning the second conductive layer. After forming an interlayer dielectric on the resultant structure by using high density plasma CVD, the resultant structure is planarized by etch-back of the interlayer dielectric to expose the surface of the conductive line(100) and to isolate the plugs(50A,50B).
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