| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a grooved polishing cloth and a method and a device for polishing a work using the grooved polishing cloth in which the outer circumferential shear drop of a work, especially a semiconductor wafer, is improved in a wafer manufacturing process at the time of polishing the work, polishing can be performed with an improved nano topology level, and a level difference can be corrected without causing the outer circumferential shear drop of the work even in a device manufacturing process. <P>SOLUTION: In the polishing cloth having grooves formed in the surface of the body and employed for polishing a work, the angle between the surface of the polishing cloth body and the side face of the groove is set not smaller than the chamfer angle of the work. <P>COPYRIGHT: (C)2003,JPO |
