发明名称 VERTICAL NANO FUSE AND NANO RESISTANCE CIRCUIT ELEMENT
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a vertical nano circuit comprising a fuse and a resistor, capable of attaining high density. <P>SOLUTION: Vertical nano circuits (100 and 300) are manufactured by such known standard processes as Damascene, wet etching, and reactive etching. So little investment is required other than for acquiring an equipment of latest technology. Thus the vertical nano circuits (100 and 300) are manufactured at a low cost. <P>COPYRIGHT: (C)2003,JPO</p>
申请公布号 JP2003162954(A) 申请公布日期 2003.06.06
申请号 JP20020273090 申请日期 2002.09.19
申请人 HEWLETT PACKARD CO 发明人 ANTHONY THOMAS C
分类号 H01H85/00;H01L21/768;H01L23/522;H01L23/525;H01L27/04;(IPC1-7):H01H85/00 主分类号 H01H85/00
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