| 摘要 |
PROBLEM TO BE SOLVED: To enhance durability of LD (semiconductor laser device) in order to prevent deterioration for an over-current as a surge-current impressed from an external side. SOLUTION: This optical semiconductor device comprises an active layer 5 which is sandwiched between clad layers to emit the light beam, a current block layer 3 which limits the current injected by an electrode, and a stripe 10 to concentrate the current injected by the electrode to an active area of the active layer which are provided on a substrate. Since an optical semiconductor device chip is thinner in the wire bonding side than the stripe side in this optical semiconductor device, a capacitance in the wire bonding side is set larger than that in the stripe side so that the higher frequency element of surge current is never supplied to the stripe side which makes contribution to the emission of light. Accordingly, the high frequency element can be passed in the wire bonding side. COPYRIGHT: (C)2003,JPO
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