| 摘要 |
PROBLEM TO BE SOLVED: To provide an inexpensive, solid magnetic memory having an ultra large capacity that can eliminate erroneous operation due to an interlayer cross-talk and at the same time can be integrated highly. SOLUTION: The magnetic memory comprises a first magnetoresistive effect element (C2), first wiring (W1) extended onto it, a second magnetoresistive effect element (C1) that is provided on it, and second wiring (B1) extended in a direction for crossing the first wiring on it. The first and second magnetoresistive effect elements have a magnetic recording layer having nearly the same magnetization anisotropy. Then, at least one portion of the magnetized direction of the magnetic recording layers is inclined in a direction that is not parallel and not vertical to at least either of the first and second wires. COPYRIGHT: (C)2003,JPO
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