METHOD FOR MANUFACTURING FLASH MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a flash memory device capable of not only improving a word line resistance but also improving the quality of a dielectric film and a gate oxide film of a peripheral circuit region. SOLUTION: The method for manufacturing the flash memory device comprises the steps of forming the dielectric film 25, and then forming an amorphous silicon layer 31 to alleviate a topology generated by patterning a first polysilicon layer 24 in a cell region so that the silicon layer 31 conducts a role of a dielectric film protective layer of the cell region at the time of forming the gate oxide film 26 of the peripheral circuit region. COPYRIGHT: (C)2003,JPO