SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME, LED LAMP AND LED DISPLAY

摘要

PROBLEM TO BE SOLVED: To manufacture, with a good mass-productivity, a semiconductor light emitting device which has a high reflection rate even with a small number of pairs of light reflection layers and allows light emitted from an active layer to be taken outside effectively.

SOLUTION: This is a method of manufacturing a semiconductor light emitting device which has such a structure that an active layer 6 which generates light of a prescribed wavelength is formed on a semiconductor substrate 1. On the semiconductor substrate 1, an AlxGa1-xAs layer 3 and the active layer 6 are deposited in this order. Part of the AlxGa1-xAs layer 3 is transformed into an AlOylayer (y is a positive real number) with respect to the layer direction.

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