发明名称 METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To solve such a problem that a conventional electroless plating method damages characteristics of elements in a wiring board and reliability of insulating films between Cu wires, and forms the breakage of selectivity and foreign materials on the insulating film to cause a short circuit between wires and reduction of the yield. SOLUTION: The electroless plating is performed to the wiring board while rotating it and pushing it to a relatively rotation surface plate, and thus growth of the plating film is inhibited on the other part than the electric wiring layer, to form a plated barrier film with high reliability. This apparatus has a heat insulation mechanism on the rotation surface plate, plating liquid, and a carrier for holding the wiring board, to keep them at a predetermined temperature during plating. The apparatus also arranges an observation hole in a resin pad, irradiates light, and detects the reflected light. Growth of the plating film on the other part than the wiring layer is controlled by electroless plating the board while sliding it. In addition, the plating barrier film forms a thinner continuous film than before, and is superior in Cu-diffusion prevention capacity in spite of being thin. The apparatus improves controllability for thickness of the plating barrier film, by detecting an initiation point of electroless plating through the observation hole. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003160877(A) 申请公布日期 2003.06.06
申请号 JP20010361912 申请日期 2001.11.28
申请人 HITACHI LTD 发明人 HONMA YOSHIO;SAKUMA NORIYUKI;NAKANO HIROSHI;ITABASHI TAKESHI;AKABOSHI HARUO
分类号 C23C18/50;C23C18/18;C23C18/31;C23F1/02;C23F1/08;C25D5/02;C25D5/22;C25D7/12;H01L21/288;H01L21/768;(IPC1-7):C23C18/50 主分类号 C23C18/50
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