发明名称 NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT
摘要 PROBLEM TO BE SOLVED: To oscillate the laser beam of single mode for a long period of time under the lower threshold value by comprising single NFP and FFP. SOLUTION: The single horizontal lateral mode can be realized by forming a p-side clad layer with a superlattice which includes a nitride semiconductor layer including at least Al, forming a ridge stripe to a part or the entire part of the p-side clad layer, and forming the ridge stripe in the manner that at least one side thereof becomes narrow as it goes closely to the resonance surface. Moreover, the single vertical lateral mode can be realized by setting the total thickness of the n-side clad layer consisting of the superlattice to 0.5μm or more, and also setting a product of the total thickness (μm) of the n-side clad layer and an average composition (%) of Al to 4.4 or more when the average composition of Al included in the n-side clad layer is expressed with the percentage (%). COPYRIGHT: (C)2003,JPO
申请公布号 JP2003163415(A) 申请公布日期 2003.06.06
申请号 JP20020354976 申请日期 2002.12.06
申请人 NICHIA CHEM IND LTD 发明人 YAMADA TAKAO;MATSUSHITA TOSHIO;NAKAMURA SHUJI
分类号 H01S5/223;H01S5/323;H01S5/343;(IPC1-7):H01S5/223 主分类号 H01S5/223
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