| 摘要 |
PROBLEM TO BE SOLVED: To improve covering property of an insulation layer and a metal layer in a semiconductor laser element including a groove or an end face which is partly removed. SOLUTION: An n-GaAs buffer layer 2, an n-Al<SB>0.4</SB>8Ga<SB>0.52</SB>As lower clad layer 3, an active layer 4, a p-In<SB>0.5</SB>Ga<SB>0.5</SB>P upper first clad layer 5, an InGaAsP etching stop layer 6, an n-In<SB>0.5</SB>Ga<SB>0.5</SB>P current constriction layer 7, a p-Al<SB>0.48</SB>Ga<SB>0.52</SB>As upper second clad layer 8, a p-GaAs contact layer 9 are formed, the contact layer 9 and the upper second clad layer 8 are etched with the mixed solution of the aqueous solution of tartaric acid and hydrogen peroxide water using an insulation film 10 which work as an etching mask material, the current constriction layer 7 is etched with the hydrochloric acid solution, and only the contact layer 9 is selectively withdrawn using the mixed solution of the aqueous solution of NH<SB>4</SB>OH and hydrogen peroxide water. The etching stop layer 6, upper first clad layer 5, active layer 4, n-Al<SB>0.48</SB>Ga<SB>0.52</SB>As lower clad layer 3 and buffer layer 2 are respectively etched with the mixed solution of bromine and methanol to selectively remove the convex area or the like remaining in the current constriction layer 7 with the aqueous solution of HCl. COPYRIGHT: (C)2003,JPO
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