METHOD FOR MANUFACTURING MEMORY CELL

摘要

PROBLEM TO BE SOLVED: To simplify the step of manufacturing a double charge storage location memory cell. SOLUTION: A dielectric stack 120 is disposed over the entire upper side surface of a structure. A contact opening 121 is formed in the dielectric layer 120 lowered to the surface of a bit line diffused part 115 of the specified region at the outside of the memory cell sub-array. Metal bit lines 123A, 123B are specified to cross a word line 119 on the bit line diffused part 115 so as to bring into contact with the position corresponding to the specified region by a normal contact forming technique and a metallization technique. The metal bit line restricts the voltage drop along the bit line diffused part 115. COPYRIGHT: (C)2003,JPO