发明名称 REMOVING TREATMENT METHOD FOR REMAINING PHOTO-RESIST
摘要 <P>PROBLEM TO BE SOLVED: To provide a treatment method using discharge plasma capable of realizing a stable discharge state under an atmospheric condition and being treated in a simple device and a small amount of a treatment gas in removing treatment of a remaining photo-resist in a semiconductor manufacturing process. <P>SOLUTION: In the removing treatment method of the remaining photo-resist in the semiconductor manufacturing process, at least one opposite face of a pair of opposite electrodes is covered with a solid dielectric under a pressure in the neighborhood of an atmospheric pressure, and glow discharge plasma obtained by introducing the treatment gas containing 1-50 vol.% of oxygen and applying an electric field between the pair of the electrodes is brought into contact with an object to be treated. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003163207(A) 申请公布日期 2003.06.06
申请号 JP20010364594 申请日期 2001.11.29
申请人 SEKISUI CHEM CO LTD 发明人 IWANE KAZUYOSHI
分类号 H05H1/26;H01L21/302;H01L21/3065 主分类号 H05H1/26
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