| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting diode which has a uniform distribution of light output and allows light to be taken out efficiently. <P>SOLUTION: The light emitting diode comprises a lower clad layer 4, active layer 5 formed of an InGaAlP-based compound which is formed on the lower clad layer 4, an upper clad layer 6 formed on the active layer 5, current diffusion layer 7 formed on the upper clad layer 6, and a surface electrode 8 formed nearly at the center of the surface of the current diffusion layer 7. The current diffusion layer 7 is disposed below the surface electrode 8, and it consists of a first layer 9 formed of a nitride compound having a large mole fraction of Al, and of a second layer 10 which is so disposed as to coat the first layer 9 and is formed of a nitride compound having a small mole fraction of Al. <P>COPYRIGHT: (C)2003,JPO |
