| 摘要 |
PROBLEM TO BE SOLVED: To provide, with good manufacturing yield, a nitride semiconductor laser device which can control kink in the I-L characteristic thereof and can oscillate in the basic lateral mode in the range up to high peak output of 60 to 100 mW when the device is driven with a pulse current. SOLUTION: A drive current attained by mixing, in a T circuit 11, a pulse signal from a pulse generator 13 and a DC current from a DC current source 14 is inputted to a nitride system semiconductor laser element 10 having a ridge structure to confine the light beam in the horizontal direction. In this nitride system semiconductor laser element 10, the horizontal direction light beam confining coefficient of the nitride system semiconductor laser element 10 is 85% or higher and 99% or lower. Moreover, the time in which the current waveform of the drive current continuously exceeds the threshold value of the nitride system semiconductor laser element is 5 [nsec] or more but 1000 [nsec] or less. COPYRIGHT: (C)2003,JPO
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