| 摘要 |
PROBLEM TO BE SOLVED: To provide a reliable semiconductor device having a resistance material film, and a method of manufacturing the same. SOLUTION: A semiconductor device 10 comprises a semiconductor substrate 1 formed with a first insulation film 2 thereon, a resistance material film 3 composed of TaSiO<SB>2</SB>which is formed on the first insulation film 2, a second insulation film 6 which has openings 7(a) and 7(b) for conduction and covers the resistance material film 3, a first resistance material film 5 which is formed while contacting the resistance material film 3, and covers at least the openings 7(a) and 7(b), and a second resistance material film 8 formed on the first resistance material film via the openings 7(a) and 7(b), wherein they are laminated. COPYRIGHT: (C)2003,JPO
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