METHOD OF DETECTING DEFECT OF SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method by which defects existing on the surfaces of semiconductor wafers can be detected stably with high sensitivity. SOLUTION: The presence/absence of an anisotropic defect 6 on the surface 2a of a semiconductor wafer 1' is detected by scanning the surface 2a of the wafer 1' with light L along the longitudinal direction of the defect 6 on the basis of the direction of semiconductor crystals constituting the wafer 1'. COPYRIGHT: (C)2003,JPO