| 摘要 |
<P>PROBLEM TO BE SOLVED: To maintain output voltage Vo at high level even if power source voltage Vcc decreases in a constant voltage generation circuit, and to maintain a large readout speed by keeping the margin between a readout current and a reference current at a sufficient size. <P>SOLUTION: The constant voltage generation circuit 1' is provided with a constant current generation circuit 10, a constant current generation circuit 40, and a constant voltage output part 30. The constant current generation circuit 10 is provided with nMOS transistor n5 connected using a diode to the constant voltage output part 30 and connected to a third current path 14. The drain voltage in the transistor n5 is output as an output voltage. In a semiconductor storage device, adjacent bit lines among a plurality of bit lines are connected to the bit lines unadjoining to each other among a plurality of bit lines. <P>COPYRIGHT: (C)2003,JPO |
