| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which is capable of increasing the light emitting efficiency by diffusing an operating current to a periphery side of an active layer 4. <P>SOLUTION: The light emitting device is an LED which comprises a semiconductor base material, an anode electrode 8 formed on the top face of the semiconductor base material, and a cathode electrode 9 formed on the bottom face of a substrate 1. The semiconductor base material comprises an n-type substrate 1, an n-type buffer layer 2, an n-type lower clad layer 3, an active layer 4, a p-type first upper clad layer 5a, an n-type graded Al current block layer 16 having a composition of (Al<SB>x</SB>Ga<SB>1-x</SB>)<SB>y</SB>In<SB>1-y</SB>P (0.1≤x≤0.6), a p-type second upper clad layer 15, and a p-type current diffusion layer 17. The Al composition (x) of the graded Al current block layer 16 increases gradually from the first upper clad layer 5a towards the second upper clad layer 15. <P>COPYRIGHT: (C)2003,JPO |
