| 摘要 |
PROBLEM TO BE SOLVED: To improve precision of alignment when forming an upper layer pattern by overlaying it on a lower layer pattern using a scanning exposure apparatus. SOLUTION: The method of each exposure apparatus comprises steps of: detecting positional information of a plurality of marks formed in a matrix arrangement in the number of at least four or more in a scan direction and at least four or more in a step direction within each shot area on a pilot wafer; computing a difference between respective coordinate components of positional information of the marks obtained from a scan exposure apparatus used for exposing an overlayed layer and of the marks obtained from a scan exposure apparatus used for exposing an overlaying layer; obtaining parameters representing respective lens aberrations from the computed difference; and exposing the overlaying layer based on corrected parameters obtained from the computed parameters. COPYRIGHT: (C)2003,JPO
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