DIELECTRIC FILM, CAPACITOR, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SAME

摘要

PROBLEM TO BE SOLVED: To provide a dielectric film, a capacitor, and a semiconductor device preferable for preventing deteriorations in leak current characteristics and dielectric characteristics caused by residual purities in a film while substantially securing charged capacitance, and to provide a method of manufacturing the same.

SOLUTION: The semiconductor device comprises a semiconductor substrate 21, a first gate insulation film portion 22a including aluminum on the semiconductor substrate, a second gate insulation film portion 22b including lithium on the first gate insulation film, and a gate electrode 23 on the second insulation film portion.

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