| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device for increasing alignment efficiency when a fuse wiring is laser-processed, and a method of manufacturing the same. SOLUTION: The semiconductor integrated circuit device comprises an Si substrate 11, a multilayer wiring layer 12 formed on the Si substrate 11, an insulation film 13 formed on the multilayer wiring layer 12. An uppermost layer 12a is formed with a wiring 21 for connection, an ordinal wiring 22, a fuse wiring 23, an alignment mark 24 for a stepper, and a target mark 25, which are all made of copper film. An external connecting pad electrode 31, an alignment mark 32 for inspection and processing, and an alignment mark 33 for the stepper, which are all made of aluminum, are formed on the insulation film 13. When the fuse wiring 23 is laser-processed, the target mark 25 included in the same wiring layer is used to perform alignment, thereby enabling a reduction in displacement during processing. COPYRIGHT: (C)2003,JPO |
