| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a thin film by chemical vapor deposition, which prevents erosion of a substrate, restrains leakage of an electric current, and improves flatness of the film surface. SOLUTION: The method for forming the thin film by chemical vapor deposition introduces alternately a raw gas and a gas activated by an activating means, onto the substrate and conducting the chemical vapor deposition on it, in a process for forming the thin film on the substrate by chemical vapor deposition, and forming the thin film having the required film thickness on the above substrate through repeating the chemical vapor deposition. COPYRIGHT: (C)2003,JPO
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