METHOD FOR FORMING SILICON FILM

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a silicon thin film with the higher supply efficiency of silicon material. SOLUTION: In a method of growing a silicon thin film on a semiconductor single crystal substrate 1 by arranging the semiconductor single crystal substrate 1 in a reactor chamber 10 and supplying a silicon material 3 into the reactor chamber 10, the wall of the reactor chamber 10 is cooled so as to make the concentration of silicon tetrachloride (SiCl4) in exhaust gas not more than one tenth of the concentration of the silicon material in the exhaust gas. The wall of the reactor chamber 10 is cooled so that the temperature gradient between the surface of the semiconductor single crystal substrate 1 and the wall of the reactor 10 in the relation with the temperature of the semiconductor single crystal substrate 1 satisfies the following formula (1), Temperature gradient (K/cm)≥0.3×substrate temperature (K)-90 (1). COPYRIGHT: (C)2003,JPO