| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device capable of preventing a disturbance. SOLUTION: The nonvolatile semiconductor storage device comprises a silicon substrate 1, and a floating gate electrode 9 formed on the substrate 1 via a gate insulating film 4. The gate electrode 9 has a lower conductive layer 7 formed on the gate insulating film 4 and having a first width W1 in a channel widthwise direction, and an upper conductive layer 8 formed on the lower conductive layer 7 and having a second width W2 larger than the first width W1 in the channel widthwise direction. COPYRIGHT: (C)2003,JPO
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