| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an energy dispersion type semiconductor X-ray detector that can detect a desired characterized X-ray with accuracy, by avoiding the bad influence of a system peak generated when an electron beam projected to a sample collides with a lower pole piece positioned below the sample after passing through the sample when the sample has a thin film-like shape. <P>SOLUTION: In this semiconductor X-ray detector 8 constituted to detect the characteristic X-ray 9 generated in the sample 5 positioned between an upper pole piece 6 and the lower pole piece 7 when the electron beam 3 emitted from an electron beam source 1 is projected upon the sample 5 from the upside of the sample 5, a collimator 12 provided with a system peak incidence blocking section 16 which blocks the incidence of the system peak 15 generated when the electron beam 3 collides with the lower pole piece 7 is provided in front of an X-ray transmitting window 11. <P>COPYRIGHT: (C)2003,JPO</p> |
