发明名称 |
WIRING STRUCTURE AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To form a multi-layer wiring structure with minuteness and high reliability by a damascene wiring method using a photosensitive insulating film. SOLUTION: An insulating film 7 for a via hole having a first via hole 6 is formed of the photosensitive insulating film mainly comprising a photosensitive polysilazane, and a second photosensitive insulating film 8 is formed by a spin application method on the whole face. A wiring groove 9 and a second via hole 10 are formed on the upper part of the first via hole 6 by only exposure/developing by a lithography method. A conductive material is buried in the wiring groove 9 and the second via hole 10 to form damascene wiring. An insulating film having a reflection prevention function on the lower layer of the photosensitive insulating film and used as an inter-layer insulating film as it stands is formed. COPYRIGHT: (C)2003,JPO |
申请公布号 |
JP2003163265(A) |
申请公布日期 |
2003.06.06 |
申请号 |
JP20010361482 |
申请日期 |
2001.11.27 |
申请人 |
NEC CORP |
发明人 |
TADA MUNEHIRO;HAYASHI YOSHIHIRO;OGURA TAKU |
分类号 |
H01L21/768;H01L21/027;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|