发明名称 WIRING STRUCTURE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To form a multi-layer wiring structure with minuteness and high reliability by a damascene wiring method using a photosensitive insulating film. SOLUTION: An insulating film 7 for a via hole having a first via hole 6 is formed of the photosensitive insulating film mainly comprising a photosensitive polysilazane, and a second photosensitive insulating film 8 is formed by a spin application method on the whole face. A wiring groove 9 and a second via hole 10 are formed on the upper part of the first via hole 6 by only exposure/developing by a lithography method. A conductive material is buried in the wiring groove 9 and the second via hole 10 to form damascene wiring. An insulating film having a reflection prevention function on the lower layer of the photosensitive insulating film and used as an inter-layer insulating film as it stands is formed. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003163265(A) 申请公布日期 2003.06.06
申请号 JP20010361482 申请日期 2001.11.27
申请人 NEC CORP 发明人 TADA MUNEHIRO;HAYASHI YOSHIHIRO;OGURA TAKU
分类号 H01L21/768;H01L21/027;(IPC1-7):H01L21/768 主分类号 H01L21/768
代理机构 代理人
主权项
地址